28th Congress of the International Council of the Aeronautical Sciences, 23 - 28 September 2012, Brisbane, Australia
THE FABRICATION AND CHARACTERIZATION OF TIO2 UV DETECTOR
H. -F. Qi, D. -B. Liu, F. -L. Sun
BIAM, Beijing, China
Keywords: tio2 films; uv detector; thin films thickness; photoelectronic property
TiO2 UV detector was prepared by magnetron sputtering techniques. The effect of thickness of the TiO2 layer on photoelectronic properties was investigated. It was found that the optimum thickness of TiO2 layer is about 197 nm. The obtained TiO2-based UV detector possesses high sensitivity, high photocurrent, and low dark current.
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